FGA25S125P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA25S125P
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 250
Tensión máxima colector-emisor |Vce|, V: 1250
Tensión máxima puerta-emisor |Vge|, V: 25
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 250
Carga total de la puerta (Qg), typ, nC: 204
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de FGA25S125P - IGBT
FGA25S125P Datasheet (PDF)
fga25s125p.pdf
FGA25S125P1250 V, 25 A Shorted-anode IGBTFeatures General Description High Speed SwitchingUsing advanced field stop trench and shorted-anode technol- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 Aogy, ON Semiconductor's shorted-anode trench IGBTs offer High Input Impedancesuperior con-duction and switching performances forsoft switching applications. The devi
fga25n120antdtu f109.pdf
uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC
fga25n120ftd.pdf
February 2009FGA25N120FTDtm1200V, 25A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 25Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wit
fga25n120antdtu.pdf
FGA25N120ANTDTU1200 V, 25 A NPT Trench IGBTFeatures Description NPT Trench Technology, Positive Temperature CoefficientUsing ON Semiconductor's proprietary trench design and Low Saturation Voltage: VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25C superior conduction and switching performances, high avalanche ruggedness an
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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Recientemente añadidas las descripciónes de los transistores
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