FGA25S125P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description High Speed Switching Using advanced field stop trench and shorted-anode technol- Low Saturation Voltage VCE(sat) = 1.8 V @ IC = 25 A ogy, ON Semiconductor's shorted-anode trench IGBTs offer High Input Impedance superior con-duction and switching performances for soft switching applications. The devi

u July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

February 2009 FGA25N120FTD tm 1200V, 25A Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.6V @ IC = 25A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel operation wit

FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features Description NPT Trench Technology, Positive Temperature Coefficient Using ON Semiconductor's proprietary trench design and Low Saturation Voltage VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25 C superior conduction and switching performances, high avalanche ruggedness an