All IGBT. FGA25S125P Datasheet

 

FGA25S125P IGBT. Datasheet pdf. Equivalent


   Type Designator: FGA25S125P
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 250 nS
   Qgⓘ - Total Gate Charge, typ: 204 nC
   Package: TO3PN

 FGA25S125P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGA25S125P Datasheet (PDF)

 ..1. Size:627K  onsemi
 fga25s125p.pdf

FGA25S125P FGA25S125P

FGA25S125P1250 V, 25 A Shorted-anode IGBTFeatures General Description High Speed SwitchingUsing advanced field stop trench and shorted-anode technol- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 Aogy, ON Semiconductor's shorted-anode trench IGBTs offer High Input Impedancesuperior con-duction and switching performances forsoft switching applications. The devi

 9.1. Size:653K  fairchild semi
 fga25n120antdtu f109.pdf

FGA25S125P FGA25S125P

uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

 9.2. Size:687K  fairchild semi
 fga25n120ftd.pdf

FGA25S125P FGA25S125P

February 2009FGA25N120FTDtm1200V, 25A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 25Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wit

 9.3. Size:1382K  onsemi
 fga25n120antdtu.pdf

FGA25S125P FGA25S125P

FGA25N120ANTDTU1200 V, 25 A NPT Trench IGBTFeatures Description NPT Trench Technology, Positive Temperature CoefficientUsing ON Semiconductor's proprietary trench design and Low Saturation Voltage: VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25C superior conduction and switching performances, high avalanche ruggedness an

Datasheet: MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C , MMGTU75J120U , SGP30N60 , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P .

 

 
Back to Top