All IGBT. FGA25S125P Datasheet

 

FGA25S125P IGBT. Datasheet pdf. Equivalent

Type Designator: FGA25S125P

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 1250

Maximum Gate-Emitter Voltage |Vge|, V: 25

Maximum Collector Current |Ic| @25℃, A: 50

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 250

Total Gate Charge (Qg), typ, nC: 204

Package: TO3PN

FGA25S125P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGA25S125P Datasheet (PDF)

 ..1. Size:627K  onsemi
 fga25s125p.pdf

FGA25S125P FGA25S125P

FGA25S125P1250 V, 25 A Shorted-anode IGBTFeatures General Description High Speed SwitchingUsing advanced field stop trench and shorted-anode technol- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 Aogy, ON Semiconductor's shorted-anode trench IGBTs offer High Input Impedancesuperior con-duction and switching performances forsoft switching applications. The devi

 9.1. Size:687K  fairchild semi
 fga25n120ftd.pdf

FGA25S125P FGA25S125P

February 2009FGA25N120FTDtm1200V, 25A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 25Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wit

 9.2. Size:653K  fairchild semi
 fga25n120antdtu f109.pdf

FGA25S125P FGA25S125P

uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

 9.3. Size:1382K  onsemi
 fga25n120antdtu.pdf

FGA25S125P FGA25S125P

FGA25N120ANTDTU1200 V, 25 A NPT Trench IGBTFeatures Description NPT Trench Technology, Positive Temperature CoefficientUsing ON Semiconductor's proprietary trench design and Low Saturation Voltage: VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25C superior conduction and switching performances, high avalanche ruggedness an

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , HCKZ75N65BH2 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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