All IGBT. FGA25S125P Datasheet

 

FGA25S125P IGBT. Datasheet pdf. Equivalent

Type Designator: FGA25S125P

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 1250

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 250

Package: TO3PN

FGA25S125P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGA25S125P Datasheet (PDF)

0.1. fga25s125p.pdf Size:627K _onsemi

FGA25S125P
FGA25S125P

FGA25S125P1250 V, 25 A Shorted-anode IGBTFeatures General Description High Speed SwitchingUsing advanced field stop trench and shorted-anode technol- Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 Aogy, ON Semiconductor's shorted-anode trench IGBTs offer High Input Impedancesuperior con-duction and switching performances forsoft switching applications. The devi

9.1. fga25n120ftd.pdf Size:687K _fairchild_semi

FGA25S125P
FGA25S125P

February 2009FGA25N120FTDtm1200V, 25A Trench IGBTFeatures Field stop trench technologyGeneral Description High speed switchingUsing advanced field stop trench technology, Fairchilds 1200V Low saturation voltage: VCE(sat) =1.6V @ IC = 25Atrench IGBTs offer superior conduction and switching perfor- High input impedancemances, and easy parallel operation wit

9.2. fga25n120antdtu f109.pdf Size:653K _fairchild_semi

FGA25S125P
FGA25S125P

uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC

Datasheet: MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C , MMGTU75J120U , 10N40C1D , JT015N065FED , , , , , , , .

 

 
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