CI20T120P Todos los transistores

 

CI20T120P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CI20T120P
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Qgⓘ - Carga total de la puerta, typ: 120 nC
   Paquete / Cubierta: TO-3P
     - Selección de transistores por parámetros

 

CI20T120P Datasheet (PDF)

 ..1. Size:423K  1
 ci20t120p.pdf pdf_icon

CI20T120P

CI20T120P20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.219(5.55)0.130(3.3)0.203(5.15

 ..2. Size:422K  citcorp
 ci20t120p.pdf pdf_icon

CI20T120P

CI20T120P20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.219(5.55)0.130(3.3)0.203(5.15

Otros transistores... FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , IRG4PC50UD , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD .

History: SSG55N60M | NGB8207AN | PDMB100E6

 

 
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