CI20T120P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CI20T120P

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 200

Tensión máxima colector-emisor |Vce|, V: 1200

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 40

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1

Tensión máxima de puerta-umbral |VGE(th)|, V: 7

Temperatura máxima de unión (Tj), ℃: 150

Tiempo de subida (tr), typ, nS: 50

Capacitancia de salida (Cc), typ, pF: 100

Carga total de la puerta (Qg), typ, nC: 120

Paquete / Cubierta: TO-3P

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CI20T120P Datasheet (PDF)

 ..1. Size:423K  1
 ci20t120p.pdf

CI20T120P20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.219(5.55)0.130(3.3)0.203(5.15

 ..2. Size:422K  citcorp
 ci20t120p.pdf

CI20T120P20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.219(5.55)0.130(3.3)0.203(5.15

Otros transistores... FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , IGW75N60T , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD .