CI20T120P Datasheet. Specs and Replacement
Type Designator: CI20T120P 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO-3P
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CI20T120P datasheet
ci20t120p.pdf
CI20T120P 20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance. 0.543(13.8) 0.197(5.00) 0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60) 0.065(1.65) 0.386(9.8) 0.057(1.45) 0.370(9.4) 0.219(5.55) 0.130(3.3) 0.203(5.15... See More ⇒
ci20t120p.pdf
CI20T120P 20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance. 0.543(13.8) 0.197(5.00) 0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60) 0.065(1.65) 0.386(9.8) 0.057(1.45) 0.370(9.4) 0.219(5.55) 0.130(3.3) 0.203(5.15... See More ⇒
Specs: FGA25S125P, JT015N065FED, 2M410A, 2M410B, 2M410B1, 2M410V, 2M410V1, 2M410G, IRG4PC50UD, IHW15N120E1, RJH3044, XNF15N60T, YGW60N65F1A1, SGT60N60FD1PN, SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD
Keywords - CI20T120P transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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