IHW15N120E1 Todos los transistores

 

IHW15N120E1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW15N120E1
   Tipo de transistor: IGBT + Diode
   Código de marcado: H15ME1
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 156
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 30
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 8
   Temperatura máxima de unión (Tj), ℃: 150
   Capacitancia de salida (Cc), typ, pF: 24
   Carga total de la puerta (Qg), typ, nC: 90
   Paquete / Cubierta: TO247

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IHW15N120E1 Datasheet (PDF)

 ..1. Size:1900K  1
ihw15n120e1.pdf

IHW15N120E1
IHW15N120E1

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic

 ..2. Size:1995K  infineon
ihw15n120e1.pdf

IHW15N120E1
IHW15N120E1

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic

 5.1. Size:569K  1
ihw15n120r2 h15r1202.pdf

IHW15N120E1
IHW15N120E1

IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI

 5.2. Size:1849K  infineon
ihw15n120r3.pdf

IHW15N120E1
IHW15N120E1

IHW15N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability

 5.3. Size:1590K  infineon
ihw15n120r3 2 2.pdf

IHW15N120E1
IHW15N120E1

IH-seriesReverse conducting IGBT with monolithic body diodeIHW15N120R3Data sheetIndustrial & MultimarketIHW15N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers: - very tight parameter distributionG -

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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