IHW15N120E1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW15N120E1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 156 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

Coesⓘ - Capacitancia de salida, typ: 24 pF

Encapsulados: TO247

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IHW15N120E1 datasheet

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IHW15N120E1

Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic

 ..2. Size:1995K  infineon
 ihw15n120e1.pdf pdf_icon

IHW15N120E1

Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic

 5.1. Size:569K  1
 ihw15n120r2 h15r1202.pdf pdf_icon

IHW15N120E1

IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI

 5.2. Size:1849K  infineon
 ihw15n120r3.pdf pdf_icon

IHW15N120E1

IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability

MOSTRAR MÁS

Otros transistores... JT015N065FED, 2M410A, 2M410B, 2M410B1, 2M410V, 2M410V1, 2M410G, CI20T120P, IKW50N60H3, RJH3044, XNF15N60T, YGW60N65F1A1, SGT60N60FD1PN, SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD, NCE15TD60BD