IHW15N120E1 Datasheet. Specs and Replacement

Type Designator: IHW15N120E1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 156 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO247

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IHW15N120E1 datasheet

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IHW15N120E1

Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic... See More ⇒

 ..2. Size:1995K  infineon
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IHW15N120E1

Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic... See More ⇒

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IHW15N120E1

IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI ... See More ⇒

 5.2. Size:1849K  infineon
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IHW15N120E1

IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability ... See More ⇒

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Specs: JT015N065FED, 2M410A, 2M410B, 2M410B1, 2M410V, 2M410V1, 2M410G, CI20T120P, IKW50N60H3, RJH3044, XNF15N60T, YGW60N65F1A1, SGT60N60FD1PN, SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD, NCE15TD60BD

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