All IGBT. IHW15N120E1 Datasheet

 

IHW15N120E1 Datasheet and Replacement


   Type Designator: IHW15N120E1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 24 pF
   Package: TO247
      - IGBT Cross-Reference

 

IHW15N120E1 Datasheet (PDF)

 ..1. Size:1900K  1
ihw15n120e1.pdf pdf_icon

IHW15N120E1

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic

 ..2. Size:1995K  infineon
ihw15n120e1.pdf pdf_icon

IHW15N120E1

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic

 5.1. Size:569K  1
ihw15n120r2 h15r1202.pdf pdf_icon

IHW15N120E1

IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI

 5.2. Size:1849K  infineon
ihw15n120r3.pdf pdf_icon

IHW15N120E1

IHW15N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IGF40T120F | KGH25N120NDA | IHW30N160R2 | IRG7PH42UD | SKW25N120 | IRG4PH30KD | 2M410V1

Keywords - IHW15N120E1 transistor datasheet

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