IHW15N120E1 IGBT. Datasheet pdf. Equivalent
Type Designator: IHW15N120E1
Type: IGBT + Anti-Parallel Diode
Marking Code: H15ME1
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Coesⓘ - Output Capacitance, typ: 24 pF
Qgⓘ - Total Gate Charge, typ: 90 nC
Package: TO247
IHW15N120E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IHW15N120E1 Datasheet (PDF)
ihw15n120e1.pdf
Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic
ihw15n120e1.pdf
Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic
ihw15n120r2 h15r1202.pdf
IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI
ihw15n120r3.pdf
IHW15N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability
ihw15n120r3 2 2.pdf
IH-seriesReverse conducting IGBT with monolithic body diodeIHW15N120R3Data sheetIndustrial & MultimarketIHW15N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers: - very tight parameter distributionG -
Datasheet: JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , GT30J127 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD .
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