YGW60N65F1A1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: YGW60N65F1A1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 79 nS

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO247

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YGW60N65F1A1 datasheet

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YGW60N65F1A1

YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 60 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

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 ygw60n65f1a1.pdf pdf_icon

YGW60N65F1A1

YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

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 ygw60n65f1a2.pdf pdf_icon

YGW60N65F1A1

YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

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 ygw60n65t1.pdf pdf_icon

YGW60N65F1A1

YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V Trench-Stop Technology offering CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

MOSTRAR MÁS

Otros transistores... 2M410B1, 2M410V, 2M410V1, 2M410G, CI20T120P, IHW15N120E1, RJH3044, XNF15N60T, FGH30S130P, SGT60N60FD1PN, SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD, NCE15TD60BD, NCE15TD60B, NCE15TD60BF, NCE80TD65BP