YGW60N65F1A1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

YGW60N65F1A1 Datasheet (PDF)

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YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

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YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

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YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

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YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Otros transistores... 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , GT30J122 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP .