YGW60N65F1A1 Todos los transistores

 

YGW60N65F1A1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: YGW60N65F1A1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 260
   Tensión máxima colector-emisor |Vce|, V: 650
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 120
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 79
   Capacitancia de salida (Cc), typ, pF: 130
   Carga total de la puerta (Qg), typ, nC: 158
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de YGW60N65F1A1 - IGBT

 

YGW60N65F1A1 Datasheet (PDF)

 ..1. Size:522K  1
ygw60n65f1a1.pdf

YGW60N65F1A1 YGW60N65F1A1

YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

 ..2. Size:422K  cn luxin semi
ygw60n65f1a1.pdf

YGW60N65F1A1 YGW60N65F1A1

YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:433K  cn luxin semi
ygw60n65f1a2.pdf

YGW60N65F1A1 YGW60N65F1A1

YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 6.1. Size:406K  cn luxin semi
ygw60n65t1.pdf

YGW60N65F1A1 YGW60N65F1A1

YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Otros transistores... 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , TGPF30N43P , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP .

 

 
Back to Top

 


YGW60N65F1A1
  YGW60N65F1A1
  YGW60N65F1A1
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ

 

 

 
Back to Top