YGW60N65F1A1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: YGW60N65F1A1

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc): 260

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.85

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 120

Максимальная температура перехода (Tj): 150

Время нарастания: 79

Емкость коллектора (Cc), pf: 130

Тип корпуса: TO247

Аналог (замена) для YGW60N65F1A1

YGW60N65F1A1 Datasheet (PDF)

..1. ygw60n65f1a1.pdf Size:522K _1

YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of

..2. ygw60n65f1a1.pdf Size:422K _cn_luxin_semi

YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

3.1. ygw60n65f1a2.pdf Size:433K _cn_luxin_semi

YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

6.1. ygw60n65t1.pdf Size:406K _cn_luxin_semi

YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

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