YGW60N65F1A1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: YGW60N65F1A1
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc): 260
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.85
Максимально допустимое напряжение эмиттер-затвор (Ueg): 20
Максимальный постоянный ток коллектора (Ic): 120
Максимальная температура перехода (Tj): 150
Время нарастания: 79
Емкость коллектора (Cc), pf: 130
Тип корпуса: TO247
Аналог (замена) для YGW60N65F1A1
YGW60N65F1A1 Datasheet (PDF)
..1. ygw60n65f1a1.pdf Size:522K _1
YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of
..2. ygw60n65f1a1.pdf Size:422K _cn_luxin_semi
YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in
3.1. ygw60n65f1a2.pdf Size:433K _cn_luxin_semi
YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in
6.1. ygw60n65t1.pdf Size:406K _cn_luxin_semi
YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 40N60C3R , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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Обновления
IGBT: TGH60N65F2DS | TGH60N65F2DR | TGH40N65F2DS | TGH40N65F2DR | TGH40N60F2D | TGH40N135FD | TGH40N120F2DR | TGAN80N65F2DS | TGAN80N60F2DS | TGAN60N65F2DS | TGAN60N65F2DR