YGW60N65F1A1 Specs and Replacement
Type Designator: YGW60N65F1A1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
YGW60N65F1A1 Substitution
YGW60N65F1A1 datasheet
ygw60n65f1a1.pdf
YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CE low switching losses, high energy efficiency I 60 A C and high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of... See More ⇒
ygw60n65f1a1.pdf
YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒
ygw60n65f1a2.pdf
YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒
ygw60n65t1.pdf
YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A C improved reliability V I =60A 1.85 V Trench-Stop Technology offering CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒
Specs: 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , FGH30S130P , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP .
Keywords - YGW60N65F1A1 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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