SGT60N60FD1PN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGT60N60FD1PN  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 321 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 142 nS

Coesⓘ - Capacitancia de salida, typ: 294 pF

Encapsulados: TO3P

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SGT60N60FD1PN datasheet

 ..1. Size:326K  silan
 sgt60n60fd1pn sgt60n60fd1p7.pdf pdf_icon

SGT60N60FD1PN

SGT60N60FD1PN/P7 60A 600V C 2 SGT60N60FD1PN/P7 Field Stop 1 G UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A

 ..2. Size:362K  silan
 sgt60n60fd1pn sgt60n60fd1p7 sgt60n60fd1ps sgt60n60fd1pt.pdf pdf_icon

SGT60N60FD1PN

SGT60N60FD1PN/P7/PS/PT 60A 600V C 2 1 SGT60N60FD1PN/P7/PS/PT Field G Stop UPS 3 SMPS PFC E 1 2 1 3 60A 600V VCE(sat)( )=2.2V@IC=60A

 9.1. Size:558K  1
 sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf pdf_icon

SGT60N60FD1PN

SGT60T65FD1P7/PN/PS/PT 60A 650V C 2 SGT60T65FD1P7/PN/PS/PT Field 1 G Stop UPS SMPS PFC 1 3 2 3 TO-3P E 60A 650V VCE(sat)( )=2.2V@IC=60A

 9.2. Size:281K  1
 sgt60u65fd1pn sgt60u65fd1pt.pdf pdf_icon

SGT60N60FD1PN

Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C 2 The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1 IV+ technology, features low conduction loss and switching loss, is G applicable to UPS, SMPS and PFC fields. FEATURES 3 E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin

MOSTRAR MÁS

Otros transistores... 2M410V, 2M410V1, 2M410G, CI20T120P, IHW15N120E1, RJH3044, XNF15N60T, YGW60N65F1A1, GT30G122, SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD, NCE15TD60BD, NCE15TD60B, NCE15TD60BF, NCE80TD65BP, NCE80TD65BT