SGT60N60FD1PN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT60N60FD1PN
Tipo de transistor: IGBT
Código de marcado: 60N60FD1
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 321
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 120
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 142
Capacitancia de salida (Cc), typ, pF: 294
Carga total de la puerta (Qg), typ, nC: 179
Paquete / Cubierta: TO3P
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SGT60N60FD1PN Datasheet (PDF)
sgt60n60fd1pn sgt60n60fd1p7.pdf

SGT60N60FD1PN/P7 60A600V C 2SGT60N60FD1PN/P7 Field Stop1G UPS,SMPS PFC 3 E 60A600VVCE(sat)( )=2.2V@IC=60A
sgt60u65fd1pn sgt60u65fd1pt.pdf

SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf

SGT60T65FD1P7/PN/PS/PT 60A650V C 2SGT60T65FD1P7/PN/PS/PT Field 1GStop UPSSMPS PFC 1323TO-3PE 60A650VVCE(sat)( )=2.2V@IC=60A
Otros transistores... 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , STGW80H65DFB , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT .



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Recientemente añadidas las descripciónes de los transistores
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