SGT60N60FD1PN IGBT. Datasheet pdf. Equivalent
Type Designator: SGT60N60FD1PN
Type: IGBT + Anti-Parallel Diode
Marking Code: 60N60FD1
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 321 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 142 nS
Coesⓘ - Output Capacitance, typ: 294 pF
Qgⓘ - Total Gate Charge, typ: 179 nC
Package: TO3P
SGT60N60FD1PN Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT60N60FD1PN Datasheet (PDF)
sgt60n60fd1pn sgt60n60fd1p7.pdf
SGT60N60FD1PN/P7 60A600V C 2SGT60N60FD1PN/P7 Field Stop1G UPS,SMPS PFC 3 E 60A600VVCE(sat)( )=2.2V@IC=60A
sgt60n60fd1pn sgt60n60fd1p7 sgt60n60fd1ps sgt60n60fd1pt.pdf
SGT60N60FD1PN/P7/PS/PT 60A600V C 21SGT60N60FD1PN/P7/PS/PT Field GStop UPS3SMPS PFC E 121 3 60A600VVCE(sat)( )=2.2V@IC=60A
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf
SGT60T65FD1P7/PN/PS/PT 60A650V C 2SGT60T65FD1P7/PN/PS/PT Field 1GStop UPSSMPS PFC 1323TO-3PE 60A650VVCE(sat)( )=2.2V@IC=60A
sgt60u65fd1pn sgt60u65fd1pt.pdf
SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin
sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf
SGT60U65FD1PN(PT)(P7) 60A650V C 2SGT60U65FD1PN(PT)(P7)1G 4 PlusField Stop IV+ UPSSMPS PFC 3 E 60A650VVCE(sat)( )=2.0V@IC=60A
Datasheet: 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , STGW60V60DF , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT .
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