NCE15TD60BF Todos los transistores

 

NCE15TD60BF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE15TD60BF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 34 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 50 pF

Encapsulados: TO220F

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NCE15TD60BF datasheet

 ..2. Size:757K  ncepower
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NCE15TD60BF

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NCE15TD60BF

Pb Free Product NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 4.1. Size:1123K  ncepower
nce15td60bt.pdf pdf_icon

NCE15TD60BF

Pb Free Product NCE15TD60BT 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

Otros transistores... XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , GT60N321 , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 .

 

 

 


 
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