NCE15TD60BF Datasheet. Specs and Replacement
Type Designator: NCE15TD60BF 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 34 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO220F
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NCE15TD60BF datasheet
nce15td60bf.pdf
Pb Free Product NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce15td60bt.pdf
Pb Free Product NCE15TD60BT 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
Specs: XNF15N60T, YGW60N65F1A1, SGT60N60FD1PN, SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD, NCE15TD60BD, NCE15TD60B, GT60N321, NCE80TD65BP, NCE80TD65BT, SGT60T65FD1PN, SGT60T65FD1P7, SGT60T65FD1PS, SGT60T65FD1PT, GPK100HF120D1, GPK200HF120D2
Keywords - NCE15TD60BF transistor spec
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