SGT60T65FD1PN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGT60T65FD1PN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 450 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 190 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: TO3P

 Búsqueda de reemplazo de SGT60T65FD1PN IGBT

- Selecciónⓘ de transistores por parámetros

 

SGT60T65FD1PN datasheet

 ..1. Size:558K  1
 sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf pdf_icon

SGT60T65FD1PN

SGT60T65FD1P7/PN/PS/PT 60A 650V C 2 SGT60T65FD1P7/PN/PS/PT Field 1 G Stop UPS SMPS PFC 1 3 2 3 TO-3P E 60A 650V VCE(sat)( )=2.2V@IC=60A

 9.1. Size:281K  1
 sgt60u65fd1pn sgt60u65fd1pt.pdf pdf_icon

SGT60T65FD1PN

Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C 2 The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1 IV+ technology, features low conduction loss and switching loss, is G applicable to UPS, SMPS and PFC fields. FEATURES 3 E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin

 9.2. Size:319K  silan
 sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf pdf_icon

SGT60T65FD1PN

 9.3. Size:326K  silan
 sgt60n60fd1pn sgt60n60fd1p7.pdf pdf_icon

SGT60T65FD1PN

SGT60N60FD1PN/P7 60A 600V C 2 SGT60N60FD1PN/P7 Field Stop 1 G UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A

MOSTRAR MÁS

Otros transistores... SGT60N60FD1P7, FGH40T120SMD, FGH50T65SQD, NCE15TD60BD, NCE15TD60B, NCE15TD60BF, NCE80TD65BP, NCE80TD65BT, IKW40N65WR5, SGT60T65FD1P7, SGT60T65FD1PS, SGT60T65FD1PT, GPK100HF120D1, GPK200HF120D2, GPU100HF120D1, GPU150HF120D2, GPU200HF120D2