SGT60T65FD1PN Datasheet and Replacement
Type Designator: SGT60T65FD1PN
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 190 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO3P
SGT60T65FD1PN substitution
SGT60T65FD1PN Datasheet (PDF)
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf
SGT60T65FD1P7/PN/PS/PT 60A650V C 2SGT60T65FD1P7/PN/PS/PT Field 1GStop UPSSMPS PFC 1323TO-3PE 60A650VVCE(sat)( )=2.2V@IC=60A
sgt60u65fd1pn sgt60u65fd1pt.pdf
SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin
sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf
SGT60U65FD1PN(PT)(P7) 60A650V C 2SGT60U65FD1PN(PT)(P7)1G 4 PlusField Stop IV+ UPSSMPS PFC 3 E 60A650VVCE(sat)( )=2.0V@IC=60A
sgt60n60fd1pn sgt60n60fd1p7.pdf
SGT60N60FD1PN/P7 60A600V C 2SGT60N60FD1PN/P7 Field Stop1G UPS,SMPS PFC 3 E 60A600VVCE(sat)( )=2.2V@IC=60A
Datasheet: SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , IKW40N65WR5 , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , GPU200HF120D2 .
History: JNG30N120HS3 | MSG30T65FHT | JNG20T60FS3 | JNG25T120HFU2 | JNG30T60HS | MSG15T65FQT | MSG15T120FQC
Keywords - SGT60T65FD1PN transistor datasheet
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History: JNG30N120HS3 | MSG30T65FHT | JNG20T60FS3 | JNG25T120HFU2 | JNG30T60HS | MSG15T65FQT | MSG15T120FQC
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