SGT60T65FD1PN IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT60T65FD1PN
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 60T65FD
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 450
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 190
   Collector Capacity (Cc), typ, pF: 200
   Total Gate Charge (Qg), typ, nC: 110
   Package: TO3P

SGT60T65FD1PN Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGT60T65FD1PN Datasheet (PDF)

..1. Size:558K 1
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf

SGT60T65FD1P7/PN/PS/PT 60A650V C 2SGT60T65FD1P7/PN/PS/PT Field 1GStop UPSSMPS PFC 1323TO-3PE 60A650VVCE(sat)( )=2.2V@IC=60A

9.1. Size:281K 1
sgt60u65fd1pn sgt60u65fd1pt.pdf

SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin

9.2. Size:319K silan
sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf