GPU200HF120D2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GPU200HF120D2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 862 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃

trⓘ - Tiempo de subida, typ: 133 nS

Coesⓘ - Capacitancia de salida, typ: 2400 pF

Encapsulados: MODULE

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GPU200HF120D2 datasheet

 ..1. Size:454K  cn hmsemi
gpu200hf120d2.pdf pdf_icon

GPU200HF120D2

GPU200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

 0.1. Size:1718K  cn daxin
gpu200hf120d2se.pdf pdf_icon

GPU200HF120D2

GPU200HF120D2SE 1200V/200A 2 in one-package Preliminary Data Features 1200V/200A,VCE =2.30V (sat)(typ) SPT Soft Punch Through technology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequ

Otros transistores... SGT60T65FD1PN, SGT60T65FD1P7, SGT60T65FD1PS, SGT60T65FD1PT, GPK100HF120D1, GPK200HF120D2, GPU100HF120D1, GPU150HF120D2, TGAN40N60FD, GPU50HF120D1, GPU75HF120D1, HM15N120A, HM20N120AB, HM20N120T, HM20N120TB, HM25N120T, HMG15N60