All IGBT. GPU200HF120D2 Datasheet

 

GPU200HF120D2 IGBT. Datasheet pdf. Equivalent


   Type Designator: GPU200HF120D2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 862
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 400
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 3.2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 133
   Collector Capacity (Cc), typ, pF: 2400
   Total Gate Charge (Qg), typ, nC: 1740
   Package: MODULE

 GPU200HF120D2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GPU200HF120D2 Datasheet (PDF)

 ..1. Size:454K  cn hmsemi
gpu200hf120d2.pdf

GPU200HF120D2 GPU200HF120D2

GPU200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

 0.1. Size:1718K  cn daxin
gpu200hf120d2se.pdf

GPU200HF120D2 GPU200HF120D2

GPU200HF120D2SE1200V/200A 2 in one-package Preliminary DataFeatures 1200V/200A,VCE =2.30V(sat)(typ) SPTSoft Punch Throughtechnology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOAGeneral ApplicationsDaxins IGBTs offer ultrafast switching speedfor application such as welding, inductiveheating, UPS and other high frequ

Datasheet: SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , IXRP15N120 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 .

 

 
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