All IGBT. GPU200HF120D2 Datasheet

 

GPU200HF120D2 IGBT. Datasheet pdf. Equivalent


   Type Designator: GPU200HF120D2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 862 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 133 nS
   Coesⓘ - Output Capacitance, typ: 2400 pF
   Qgⓘ - Total Gate Charge, typ: 1740 nC
   Package: MODULE

 GPU200HF120D2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GPU200HF120D2 Datasheet (PDF)

 ..1. Size:454K  cn hmsemi
gpu200hf120d2.pdf

GPU200HF120D2 GPU200HF120D2

GPU200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

 0.1. Size:1718K  cn daxin
gpu200hf120d2se.pdf

GPU200HF120D2 GPU200HF120D2

GPU200HF120D2SE1200V/200A 2 in one-package Preliminary DataFeatures 1200V/200A,VCE =2.30V(sat)(typ) SPTSoft Punch Throughtechnology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOAGeneral ApplicationsDaxins IGBTs offer ultrafast switching speedfor application such as welding, inductiveheating, UPS and other high frequ

Datasheet: SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , HGTG30N60A4 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 .

 

 
Back to Top