CRG60T60AN3H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRG60T60AN3H
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 403 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 124
Capacitancia de salida (Cc), typ, pF: 224
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de CRG60T60AN3H - IGBT
CRG60T60AN3H Datasheet (PDF)
crg60t60an3h.pdf
Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag
crg60t60an3h.pdf
CRG60T60AN3H CRG60T60AN3H FS IGBT VCES 600 V IC 60 A RoHS 403 W Ptot TC=25VCE(sat) 1.85 V TO-3PN FS VCE(s
crg60t60an3h.pdf
Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag
crg60t60ak3hd.pdf
CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25VCE(sat) 1.85 V TO-247 FS VCE(sat),
crg60t60ak3sd.pdf
Silicon FS Trench IGBT CRG60T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.72 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat
crg60t60ak3hd.pdf
Silicon FS Trench IGBT CRG60T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat
crg60t60ak3h.pdf
Silicon FS Trench IGBT CRG60T60AK3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag
Otros transistores... HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , IXGH60N60 , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 .
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