Справочник IGBT. CRG60T60AN3H

 

CRG60T60AN3H - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: CRG60T60AN3H
   Тип транзистора: IGBT
   Маркировка: G60T60AN3H
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 403
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 120
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.85
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 124
   Емкость коллектора типовая (Cc), pf: 224
   Общий заряд затвора (Qg), typ, nC: 117
   Тип корпуса: TO3PN

 Аналог (замена) для CRG60T60AN3H

 

 

CRG60T60AN3H Datasheet (PDF)

 ..1. Size:1254K  1
crg60t60an3h.pdf

CRG60T60AN3H
CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

 ..2. Size:955K  crhj
crg60t60an3h.pdf

CRG60T60AN3H
CRG60T60AN3H

CRG60T60AN3H CRG60T60AN3H FS IGBT VCES 600 V IC 60 A RoHS 403 W Ptot TC=25VCE(sat) 1.85 V TO-3PN FS VCE(s

 ..3. Size:1254K  wuxi china
crg60t60an3h.pdf

CRG60T60AN3H
CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

 5.1. Size:972K  crhj
crg60t60ak3hd.pdf

CRG60T60AN3H
CRG60T60AN3H

CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25VCE(sat) 1.85 V TO-247 FS VCE(sat),

 5.2. Size:1275K  wuxi china
crg60t60ak3sd.pdf

CRG60T60AN3H
CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.72 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

 5.3. Size:1259K  wuxi china
crg60t60ak3h.pdf

CRG60T60AN3H
CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AK3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

 5.4. Size:1303K  wuxi china
crg60t60ak3hd.pdf

CRG60T60AN3H
CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

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