Справочник IGBT. CRG60T60AN3H

 

CRG60T60AN3H - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: CRG60T60AN3H
   Тип транзистора: IGBT + Diode
   Маркировка: G60T60AN3H
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 403 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 124 nS
   Coesⓘ - Выходная емкость, типовая: 224 pF
   Qgⓘ - Общий заряд затвора, typ: 117 nC
   Тип корпуса: TO3PN

 Аналог (замена) для CRG60T60AN3H

 

 

CRG60T60AN3H Datasheet (PDF)

 ..1. Size:1254K  1
crg60t60an3h.pdf

CRG60T60AN3H CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

 ..2. Size:955K  crhj
crg60t60an3h.pdf

CRG60T60AN3H CRG60T60AN3H

CRG60T60AN3H CRG60T60AN3H FS IGBT VCES 600 V IC 60 A RoHS 403 W Ptot TC=25VCE(sat) 1.85 V TO-3PN FS VCE(s

 ..3. Size:1254K  wuxi china
crg60t60an3h.pdf

CRG60T60AN3H CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

 5.1. Size:972K  crhj
crg60t60ak3hd.pdf

CRG60T60AN3H CRG60T60AN3H

CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25VCE(sat) 1.85 V TO-247 FS VCE(sat),

 5.2. Size:1275K  wuxi china
crg60t60ak3sd.pdf

CRG60T60AN3H CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.72 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

 5.3. Size:1303K  wuxi china
crg60t60ak3hd.pdf

CRG60T60AN3H CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

 5.4. Size:1259K  wuxi china
crg60t60ak3h.pdf

CRG60T60AN3H CRG60T60AN3H

Silicon FS Trench IGBT CRG60T60AK3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

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