CRG60T60AN3H Specs and Replacement
The CRG60T60AN3H is a high-performance Insulated Gate Bipolar Transistor designed for efficient power switching in medium- and high-power applications. It combines the low conduction losses of a bipolar transistor with the voltage-controlled gate of a MOSFET, providing high input impedance and simplified gate drive requirements. This device is optimized for fast switching behavior, low saturation voltage, robust short-circuit capability, making it suitable for inverter systems, motor drives, power supplies, industrial automation equipment. The CRG60T60AN3H typically features a rugged silicon structure that enhances thermal stability and reliability under high current and voltage stress. Its low gate charge and optimized switching characteristics help reduce system losses and electromagnetic interference. The CRG60T60AN3H enables designers to achieve higher efficiency, compact system design, long operational lifetime in demanding power electronics applications.
Type Designator: CRG60T60AN3H
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 403 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Package: TO3PN
CRG60T60AN3H Substitution - IGBT ⓘ Cross-Reference Search
CRG60T60AN3H datasheet
crg60t60an3h.pdf
Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25 VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag... See More ⇒
crg60t60an3h.pdf
CRG60T60AN3H CRG60T60AN3H FS IGBT VCES 600 V IC 60 A RoHS 403 W Ptot TC=25 VCE(sat) 1.85 V TO-3P N FS VCE(s... See More ⇒
crg60t60an3h.pdf
Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25 VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag... See More ⇒
crg60t60ak3hd.pdf
CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25 VCE(sat) 1.85 V TO-247 FS VCE(sat),... See More ⇒
Specs: HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , IXGH60N60 , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 .
History: IXGY2N120 | SSG55N60M | FGPF70N33BT
Keywords - CRG60T60AN3H transistor spec
CRG60T60AN3H cross reference
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History: IXGY2N120 | SSG55N60M | FGPF70N33BT
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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