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YGW40N65F1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: YGW40N65F1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 188 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Qgⓘ - Carga total de la puerta, typ: 90 nC
   Paquete / Cubierta: TO247

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YGW40N65F1 Datasheet (PDF)

 ..1. Size:599K  1
ygw40n65f1.pdf

YGW40N65F1
YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 ..2. Size:412K  cn luxin semi
ygw40n65f1.pdf

YGW40N65F1
YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 0.1. Size:412K  cn luxin semi
ygw40n65f1a1.pdf

YGW40N65F1
YGW40N65F1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 0.2. Size:412K  cn luxin semi
ygw40n65f1a2.pdf

YGW40N65F1
YGW40N65F1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 8.1. Size:466K  cn luxin semi
ygw40n120f2.pdf

YGW40N65F1
YGW40N65F1

YGW40N120F2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability due

 8.2. Size:527K  cn luxin semi
ygw40n120t2.pdf

YGW40N65F1
YGW40N65F1

YGW40N120T2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switchin

 8.3. Size:502K  cn luxin semi
ygw40n120t3.pdf

YGW40N65F1
YGW40N65F1

YGW40N120T3 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall

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