YGW40N65F1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: YGW40N65F1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 188 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 90 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de YGW40N65F1 - IGBT
YGW40N65F1 Datasheet (PDF)
ygw40n65f1.pdf
YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V
ygw40n65f1.pdf
YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V
ygw40n65f1a1.pdf
YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in
ygw40n65f1a2.pdf
YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in
ygw40n120f2.pdf
YGW40N120F2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability due
ygw40n120t2.pdf
YGW40N120T2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switchin
ygw40n120t3.pdf
YGW40N120T3 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall
Otros transistores... KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , FGA25N120ANTD , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 .
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