Справочник IGBT. YGW40N65F1

 

YGW40N65F1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: YGW40N65F1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 188
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.6
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 80
   Емкость коллектора типовая (Cc), pf: 100
   Общий заряд затвора (Qg), typ, nC: 90
   Тип корпуса: TO247

 Аналог (замена) для YGW40N65F1

 

 

YGW40N65F1 Datasheet (PDF)

 ..1. Size:599K  1
 ygw40n65f1.pdf

YGW40N65F1 YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 ..2. Size:412K  cn luxin semi
 ygw40n65f1.pdf

YGW40N65F1 YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 0.1. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf

YGW40N65F1 YGW40N65F1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 0.2. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf

YGW40N65F1 YGW40N65F1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 8.1. Size:466K  cn luxin semi
 ygw40n120f2.pdf

YGW40N65F1 YGW40N65F1

YGW40N120F2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.8 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability due

 8.2. Size:527K  cn luxin semi
 ygw40n120t2.pdf

YGW40N65F1 YGW40N65F1

YGW40N120T2 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switchin

 8.3. Size:502K  cn luxin semi
 ygw40n120t3.pdf

YGW40N65F1 YGW40N65F1

YGW40N120T3 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A Cimproved reliability V I =40A 1.75 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall

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