All IGBT. YGW40N65F1 Datasheet

 

YGW40N65F1 Datasheet and Replacement


   Type Designator: YGW40N65F1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Qg ⓘ - Total Gate Charge, typ: 90 nC
   Package: TO247
 

 YGW40N65F1 substitution

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YGW40N65F1 Datasheet (PDF)

 ..1. Size:599K  1
 ygw40n65f1.pdf pdf_icon

YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 ..2. Size:412K  cn luxin semi
 ygw40n65f1.pdf pdf_icon

YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 0.1. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf pdf_icon

YGW40N65F1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 0.2. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf pdf_icon

YGW40N65F1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

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History: BT40N60BNF

Keywords - YGW40N65F1 transistor datasheet

 YGW40N65F1 cross reference
 YGW40N65F1 equivalent finder
 YGW40N65F1 lookup
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 YGW40N65F1 replacement

 

 
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