YGW40N65F1 Datasheet. Specs and Replacement

Type Designator: YGW40N65F1  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 188 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Qg ⓘ - Total Gate Charge, typ: 90 nC

Package: TO247

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YGW40N65F1 datasheet

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YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

 ..2. Size:412K  cn luxin semi
 ygw40n65f1.pdf pdf_icon

YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V ... See More ⇒

 0.1. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf pdf_icon

YGW40N65F1

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒

 0.2. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf pdf_icon

YGW40N65F1

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in ... See More ⇒

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Specs: KDG40R12KT3, CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, FGA25N120ANTD, AOD5B65M1, AOTF15B65M1, CRG15T120BNR3S, GPU200HF120D2SE, RCF1565SL1, RCP1565SL1, RCB1565SL1, RCD1565SL1

Keywords - YGW40N65F1 transistor spec

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