GPU200HF120D2SE Todos los transistores

 

GPU200HF120D2SE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GPU200HF120D2SE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 835 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 75 nS
   Coesⓘ - Capacitancia de salida, typ: 2100 pF
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

GPU200HF120D2SE Datasheet (PDF)

 0.1. Size:1718K  cn daxin
 gpu200hf120d2se.pdf pdf_icon

GPU200HF120D2SE

GPU200HF120D2SE1200V/200A 2 in one-package Preliminary DataFeatures 1200V/200A,VCE =2.30V(sat)(typ) SPTSoft Punch Throughtechnology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOAGeneral ApplicationsDaxins IGBTs offer ultrafast switching speedfor application such as welding, inductiveheating, UPS and other high frequ

 1.1. Size:454K  cn hmsemi
 gpu200hf120d2.pdf pdf_icon

GPU200HF120D2SE

GPU200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

Otros transistores... SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GT30F126 , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A .

History: RJH60F4DPK | CPV362M4UPBF

 

 
Back to Top

 


 
.