All IGBT. GPU200HF120D2SE Datasheet

 

GPU200HF120D2SE IGBT. Datasheet pdf. Equivalent


   Type Designator: GPU200HF120D2SE
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 835
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 400
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 75
   Collector Capacity (Cc), typ, pF: 2100
   Total Gate Charge (Qg), typ, nC: 1500
   Package: MODULE

 GPU200HF120D2SE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GPU200HF120D2SE Datasheet (PDF)

 0.1. Size:1718K  cn daxin
 gpu200hf120d2se.pdf

GPU200HF120D2SE GPU200HF120D2SE

GPU200HF120D2SE1200V/200A 2 in one-package Preliminary DataFeatures 1200V/200A,VCE =2.30V(sat)(typ) SPTSoft Punch Throughtechnology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOAGeneral ApplicationsDaxins IGBTs offer ultrafast switching speedfor application such as welding, inductiveheating, UPS and other high frequ

 1.1. Size:454K  cn hmsemi
 gpu200hf120d2.pdf

GPU200HF120D2SE GPU200HF120D2SE

GPU200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

Datasheet: SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , CRG40T60AK3HD , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A .

 

 
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