All IGBT. GPU200HF120D2SE Datasheet

 

GPU200HF120D2SE Datasheet and Replacement


   Type Designator: GPU200HF120D2SE
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 835 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 75 nS
   Coesⓘ - Output Capacitance, typ: 2100 pF
   Qg ⓘ - Total Gate Charge, typ: 1500 nC
   Package: MODULE
 

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GPU200HF120D2SE Datasheet (PDF)

 0.1. Size:1718K  cn daxin
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GPU200HF120D2SE

GPU200HF120D2SE1200V/200A 2 in one-package Preliminary DataFeatures 1200V/200A,VCE =2.30V(sat)(typ) SPTSoft Punch Throughtechnology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOAGeneral ApplicationsDaxins IGBTs offer ultrafast switching speedfor application such as welding, inductiveheating, UPS and other high frequ

 1.1. Size:454K  cn hmsemi
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GPU200HF120D2SE

GPU200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

Datasheet: SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GT30F126 , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A .

History: FGA30N120FTD

Keywords - GPU200HF120D2SE transistor datasheet

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