GPU200HF120D2SE Specs and Replacement
Type Designator: GPU200HF120D2SE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 835 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 2100 pF
Package: MODULE GPU200HF120D2SE Substitution - IGBT ⓘ Cross-Reference Search
GPU200HF120D2SE datasheet
gpu200hf120d2se.pdf
GPU200HF120D2SE 1200V/200A 2 in one-package Preliminary Data Features 1200V/200A,VCE =2.30V (sat)(typ) SPT Soft Punch Through technology Lower losses Higher system efficiency Excellent short-circuit capability Square RBSOA General Applications Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequ... See More ⇒
gpu200hf120d2.pdf
GPU200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =3.2V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut... See More ⇒
Specs: SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , FGA60N65SMD , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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