BG150B12UY3-I - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BG150B12UY3-I
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 145 nS
Paquete / Cubierta: MODULE
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BG150B12UY3-I Datasheet (PDF)
bg150b12uy3-i.pdf
BG150B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12UY3-I provides fast High speed IGBT in trench/field stop technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD
bg150b12ly2-i.pdf
BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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Recientemente añadidas las descripciónes de los transistores
IGBT: DAZF150G120XCA | DAZF150G120SCA | DAZF100G170XCA | DAZF100G120XCA | DAZF100G120SCA | DAZF075G120XCA | DAZF075G120SCA | DAHF300G120SB | DAHF225G120SB | DAHF200G120SB | DAHF150G120SB