BG150B12UY3-I Todos los transistores

 

BG150B12UY3-I IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BG150B12UY3-I

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃

trⓘ - Tiempo de subida, typ: 145 nS

Encapsulados: MODULE

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BG150B12UY3-I datasheet

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 bg150b12uy3-i.pdf pdf_icon

BG150B12UY3-I

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BG150B12UY3-I

BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa

Otros transistores... DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , IKW50N60T , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 .

History: SME6G30US60 | JT010N065WED | BG150B12LY2-I | NCE40TD60BP | IXXH50N60B3 | ISL9V3040S3ST-F085C

 

 

 

 

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