All IGBT. BG150B12UY3-I Datasheet

 

BG150B12UY3-I Datasheet and Replacement


   Type Designator: BG150B12UY3-I
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 145 nS
   Package: MODULE
      - IGBT Cross-Reference

 

BG150B12UY3-I Datasheet (PDF)

 ..1. Size:988K  cn byd
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BG150B12UY3-I

BG150B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12UY3-I provides fast High speed IGBT in trench/field stop technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD

 6.1. Size:1130K  cn byd
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BG150B12UY3-I

BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa

Datasheet: DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , SGT50T65FD1PN , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 .

History: APT75GN120LG | IXGK120N120B3 | IXGX12N90C | IKQ100N60T

Keywords - BG150B12UY3-I transistor datasheet

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 BG150B12UY3-I equivalent finder
 BG150B12UY3-I lookup
 BG150B12UY3-I substitution
 BG150B12UY3-I replacement

 

 
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