BG150B12UY3-I IGBT. Datasheet pdf. Equivalent
Type Designator: BG150B12UY3-I
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 145
Package: MODULE
BG150B12UY3-I Transistor Equivalent Substitute - IGBT Cross-Reference Search
BG150B12UY3-I Datasheet (PDF)
bg150b12uy3-i.pdf
BG150B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12UY3-I provides fast High speed IGBT in trench/field stop technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD
bg150b12ly2-i.pdf
BG150B12LY2-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=150A General Description Features BYD IGBT Power Module BG150B12LY2-I provides low Half-bridge switching loss as well as high short circuit capability, which Low inductance introduce the advanced IGBT chip/FWD and improved Standard package connection, it is able to take on a perfect performa
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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