BT15T60A9F Todos los transistores

 

BT15T60A9F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BT15T60A9F

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 26 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 60 pF

Encapsulados: TO220F

 Búsqueda de reemplazo de BT15T60A9F IGBT

- Selección ⓘ de transistores por parámetros

 

BT15T60A9F datasheet

 ..1. Size:600K  wuxi china
bt15t60a8f bt15t60a9f.pdf pdf_icon

BT15T60A9F

 9.1. Size:557K  crhj
bt15t120anf.pdf pdf_icon

BT15T60A9F

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe

 9.2. Size:261K  wuxi china
bt15t120cnr.pdf pdf_icon

BT15T60A9F

Silicon FS Trench IGBT R BT15T120 CNR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. Features Trench FS T

 9.3. Size:557K  wuxi china
bt15t120anf.pdf pdf_icon

BT15T60A9F

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe

Otros transistores... RGPR20NS43 , RGS80TSX2DHR , RGT50NL65D , RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , IRG4PC50U , BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT .

History: SKM195GB062D

 

 

 

 

↑ Back to Top
.