BT15T60A9F Spec and Replacement, IGBT Equivalent Finder, Cross Reference

BT15T60A9F Specs and Replacement

Type Designator: BT15T60A9F

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 26 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: TO220F

BT15T60A9F Substitution

- IGBT ⓘ Cross-Reference Search

BT15T60A9F datasheet

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9.1. Size:557K crhj
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Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe... See More ⇒

9.2. Size:261K wuxi china
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Silicon FS Trench IGBT R BT15T120 CNR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. Features Trench FS T... See More ⇒

9.3. Size:557K wuxi china
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