DGTD120T25S1PT Todos los transistores

 

DGTD120T25S1PT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DGTD120T25S1PT

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 348 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 41 nS

Coesⓘ - Capacitancia de salida, typ: 142 pF

Encapsulados: TO247

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DGTD120T25S1PT datasheet

 ..1. Size:1626K  diodes
dgtd120t25s1pt.pdf pdf_icon

DGTD120T25S1PT

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/ s Ultra

 6.1. Size:1040K  diodes
dgtd120t40s1pt.pdf pdf_icon

DGTD120T25S1PT

DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof

Otros transistores... RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , FGH75T65UPD , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H .

History: SKM400GAL124D | 6MBP100VDA120-50

 

 

 


History: SKM400GAL124D | 6MBP100VDA120-50

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