DGTD120T25S1PT Datasheet. Specs and Replacement

Type Designator: DGTD120T25S1PT  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 348 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 41 nS

Coesⓘ - Output Capacitance, typ: 142 pF

Package: TO247

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DGTD120T25S1PT datasheet

 ..1. Size:1626K  diodes
 dgtd120t25s1pt.pdf pdf_icon

DGTD120T25S1PT

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/ s Ultra... See More ⇒

 6.1. Size:1040K  diodes
 dgtd120t40s1pt.pdf pdf_icon

DGTD120T25S1PT

DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof... See More ⇒

Specs: RGTH60TS65DGC13, BT15T120CNR, BT15T60A8F, BT15T60A9F, BT25T120CKR, BT40T120CKF, BT50T60ANFK, BT60T60ANFK, IRGP4066D, DGTD120T40S1PT, DGTD65T15H2TF, DGTD65T40S2PT, DGTD65T50S1PT, DGTD65T60S2PT, KGF40N65KDC, KGF75N65KDF, LEGM200BA120L2H

Keywords - DGTD120T25S1PT transistor spec

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