All IGBT. DGTD120T25S1PT Datasheet

 

DGTD120T25S1PT IGBT. Datasheet pdf. Equivalent


   Type Designator: DGTD120T25S1PT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 348 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 142 pF
   Qgⓘ - Total Gate Charge, typ: 204 nC
   Package: TO247

 DGTD120T25S1PT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGTD120T25S1PT Datasheet (PDF)

 ..1. Size:1626K  diodes
 dgtd120t25s1pt.pdf

DGTD120T25S1PT DGTD120T25S1PT

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/s Ultra

 6.1. Size:1040K  diodes
 dgtd120t40s1pt.pdf

DGTD120T25S1PT DGTD120T25S1PT

DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof

Datasheet: RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , SGP30N60 , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF , LEGM200BA120L2H .

 

 
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