All IGBT. DGTD120T25S1PT Datasheet

 

DGTD120T25S1PT IGBT. Datasheet pdf. Equivalent


   Type Designator: DGTD120T25S1PT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 348
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 41
   Collector Capacity (Cc), typ, pF: 142
   Total Gate Charge (Qg), typ, nC: 204
   Package: TO247

 DGTD120T25S1PT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DGTD120T25S1PT Datasheet (PDF)

 ..1. Size:1626K  diodes
 dgtd120t25s1pt.pdf

DGTD120T25S1PT DGTD120T25S1PT

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/s Ultra

 6.1. Size:1040K  diodes
 dgtd120t40s1pt.pdf

DGTD120T25S1PT DGTD120T25S1PT

DGTD120T40S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 40A quality and high switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 200A/us Ultra Sof

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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