KGF75N65KDF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGF75N65KDF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 484 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.77 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 115 nS
Coesⓘ - Capacitancia de salida, typ: 198 pF
Qgⓘ - Carga total de la puerta, typ: 128 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
KGF75N65KDF Datasheet (PDF)
kgf75n65kdf.pdf
SEMICONDUCTORKGF75N65KDFTECHNICAL DATAGeneral DescriptionBKEC Field Stop Trench IGBTs offer low switching losses, high energy AOS Kefficiency and short circuit ruggedness.It is designed for applications such as Power Factor Correction(PFC),Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and GeneralDIM MILLIMETERS_+A 15.90 0.30Converters._B5.00 + 0
kgf75n60kdb.pdf
SEMICONDUCTORKGF75N60KDBTECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FGW30N120H | SIGC03T60SE
History: FGW30N120H | SIGC03T60SE
Liste
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