KGF75N65KDF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGF75N65KDF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 484 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.77 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 115 nS
Coesⓘ - Capacitancia de salida, typ: 198 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de KGF75N65KDF IGBT
KGF75N65KDF datasheet
kgf75n65kdf.pdf
SEMICONDUCTOR KGF75N65KDF TECHNICAL DATA General Description B KEC Field Stop Trench IGBTs offer low switching losses, high energy A O S K efficiency and short circuit ruggedness. It is designed for applications such as Power Factor Correction(PFC), Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS _ + A 15.90 0.30 Converters. _ B 5.00 + 0
kgf75n60kdb.pdf
SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T
Otros transistores... BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , MGD623S , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG .
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