KGF75N65KDF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KGF75N65KDF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 484 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.77 V @25℃

trⓘ - Tiempo de subida, typ: 115 nS

Coesⓘ - Capacitancia de salida, typ: 198 pF

Encapsulados: TO247

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KGF75N65KDF datasheet

 ..1. Size:327K  kec
 kgf75n65kdf.pdf pdf_icon

KGF75N65KDF

SEMICONDUCTOR KGF75N65KDF TECHNICAL DATA General Description B KEC Field Stop Trench IGBTs offer low switching losses, high energy A O S K efficiency and short circuit ruggedness. It is designed for applications such as Power Factor Correction(PFC), Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS _ + A 15.90 0.30 Converters. _ B 5.00 + 0

 7.1. Size:1559K  kec
 kgf75n60kdb.pdf pdf_icon

KGF75N65KDF

SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T

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