All IGBT. KGF75N65KDF Datasheet

 

KGF75N65KDF Datasheet and Replacement


   Type Designator: KGF75N65KDF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 484 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 115 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Package: TO247
      - IGBT Cross-Reference

 

KGF75N65KDF Datasheet (PDF)

 ..1. Size:327K  kec
 kgf75n65kdf.pdf pdf_icon

KGF75N65KDF

SEMICONDUCTORKGF75N65KDFTECHNICAL DATAGeneral DescriptionBKEC Field Stop Trench IGBTs offer low switching losses, high energy AOS Kefficiency and short circuit ruggedness.It is designed for applications such as Power Factor Correction(PFC),Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and GeneralDIM MILLIMETERS_+A 15.90 0.30Converters._B5.00 + 0

 7.1. Size:1559K  kec
 kgf75n60kdb.pdf pdf_icon

KGF75N65KDF

SEMICONDUCTORKGF75N60KDBTECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T

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History: IRGC16B60KB

Keywords - KGF75N65KDF transistor datasheet

 KGF75N65KDF cross reference
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