KGF75N65KDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

KGF75N65KDF Specs and Replacement

Type Designator: KGF75N65KDF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 484 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.77 V @25℃

tr ⓘ - Rise Time, typ: 115 nS

Coesⓘ - Output Capacitance, typ: 198 pF

Package: TO247

KGF75N65KDF Substitution

- IGBT ⓘ Cross-Reference Search

KGF75N65KDF datasheet

..1. Size:327K kec
kgf75n65kdf.pdf pdf_icon

SEMICONDUCTOR KGF75N65KDF TECHNICAL DATA General Description B KEC Field Stop Trench IGBTs offer low switching losses, high energy A O S K efficiency and short circuit ruggedness. It is designed for applications such as Power Factor Correction(PFC), Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS _ + A 15.90 0.30 Converters. _ B 5.00 + 0... See More ⇒

7.1. Size:1559K kec
kgf75n60kdb.pdf pdf_icon

SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T... See More ⇒

Specs: BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , MGD623S , LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG .