SPT60N65F1A1T8TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPT60N65F1A1T8TL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 79 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO247
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SPT60N65F1A1T8TL Datasheet (PDF)
spt60n65f1a1t8tl.pdf

SPT60N65F1A1T8TL650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering
spt60n65f1a1.pdf

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :
Otros transistores... SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , IRG4PC50UD , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 .
History: SGM25PA12A8TFD | MMG100J060U | SL25T120FL | DIM800DCS12-A | CM400DY-66H | APTGF330SK60D3 | IKD15N60RF
History: SGM25PA12A8TFD | MMG100J060U | SL25T120FL | DIM800DCS12-A | CM400DY-66H | APTGF330SK60D3 | IKD15N60RF



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