SPT60N65F1A1T8TL Todos los transistores

 

SPT60N65F1A1T8TL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPT60N65F1A1T8TL
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 79 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Paquete / Cubierta: TO247
 

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SPT60N65F1A1T8TL Datasheet (PDF)

 0.1. Size:5471K  cn sps
 spt60n65f1a1t8tl.pdf pdf_icon

SPT60N65F1A1T8TL

SPT60N65F1A1T8TL650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

 2.1. Size:1785K  cn sptech
 spt60n65f1a1.pdf pdf_icon

SPT60N65F1A1T8TL

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4BC40U | BLG50T65FLA-F

 

 
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History: IRG4BC40U | BLG50T65FLA-F

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