SPT60N65F1A1T8TL Todos los transistores

 

SPT60N65F1A1T8TL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPT60N65F1A1T8TL

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 79 nS

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO247

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SPT60N65F1A1T8TL datasheet

 0.1. Size:5471K  cn sps
 spt60n65f1a1t8tl.pdf pdf_icon

SPT60N65F1A1T8TL

SPT60N65F1A1T8TL 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CE switching losses, high energy efficiency and I 60 A C high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering

 2.1. Size:1785K  cn sptech
 spt60n65f1a1.pdf pdf_icon

SPT60N65F1A1T8TL

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CE switching losses, high energy efficiency and I 60 A C high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering

Otros transistores... SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , IRG4PC50UD , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 .

History: SPT25N120F1 | SRE100N065FSU2D6 | RJH60D5DPK | TGAN40N135FD | SPT25N120T1T8TL | XD075H065CX1S3 | SGW5N60RUFD

 

 

 

 

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