All IGBT. SPT60N65F1A1T8TL Datasheet

 

SPT60N65F1A1T8TL IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT60N65F1A1T8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 79 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 158 nC
   Package: TO247

 SPT60N65F1A1T8TL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT60N65F1A1T8TL Datasheet (PDF)

 0.1. Size:5471K  cn sps
 spt60n65f1a1t8tl.pdf

SPT60N65F1A1T8TL SPT60N65F1A1T8TL

SPT60N65F1A1T8TL650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

 2.1. Size:1785K  cn sptech
 spt60n65f1a1.pdf

SPT60N65F1A1T8TL SPT60N65F1A1T8TL

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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