SPT60N65F1A1T8TL Specs and Replacement
Type Designator: SPT60N65F1A1T8TL
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
SPT60N65F1A1T8TL Substitution - IGBT ⓘ Cross-Reference Search
SPT60N65F1A1T8TL datasheet
spt60n65f1a1t8tl.pdf
SPT60N65F1A1T8TL 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CE switching losses, high energy efficiency and I 60 A C high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering ... See More ⇒
spt60n65f1a1.pdf
SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CE switching losses, high energy efficiency and I 60 A C high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) C FEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology offering ... See More ⇒
Specs: SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , IRG4PC50UD , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , XNS40N120T , XD015H060CX1S3 , XD015H120CX1 , XD015H120CX1S3 , XD025H120CX1 .
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