XP025PJE120AT1B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP025PJE120AT1B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 153 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.24 V @25℃
trⓘ - Tiempo de subida, typ: 31 nS
Coesⓘ - Capacitancia de salida, typ: 145 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
XP025PJE120AT1B2 Datasheet (PDF)
xp025pje120at1b2.pdf

XP025PJE120AT1B2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures Trench+ Field Stop Technology1200V Trench Field-Stop IGBT Low VCE(sat) with Low Switching LossesApplications Frequency CovertersMotor DrivesAuxiliary InvertersEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values Unit
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MSG100D350FH | BLG60T65FDL-W | MMG200D170B6TC | NCE20TD60BF | APTGF25X120E2 | GA600GD25S | IRGP4069DPBF
History: MSG100D350FH | BLG60T65FDL-W | MMG200D170B6TC | NCE20TD60BF | APTGF25X120E2 | GA600GD25S | IRGP4069DPBF



Liste
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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