XP025PJE120AT1B2 IGBT. Datasheet pdf. Equivalent
Type Designator: XP025PJE120AT1B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 153 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.24 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5(typ) V
trⓘ - Rise Time, typ: 31 nS
Coesⓘ - Output Capacitance, typ: 145 pF
Package: MODULE
XP025PJE120AT1B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
XP025PJE120AT1B2 Datasheet (PDF)
xp025pje120at1b2.pdf
XP025PJE120AT1B2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures Trench+ Field Stop Technology1200V Trench Field-Stop IGBT Low VCE(sat) with Low Switching LossesApplications Frequency CovertersMotor DrivesAuxiliary InvertersEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values Unit
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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