XP025PJE120AT1B2 Datasheet and Replacement
Type Designator: XP025PJE120AT1B2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 153 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.24 V @25℃
trⓘ - Rise Time, typ: 31 nS
Coesⓘ - Output Capacitance, typ: 145 pF
Package: MODULE
- IGBT Cross-Reference
XP025PJE120AT1B2 Datasheet (PDF)
xp025pje120at1b2.pdf
XP025PJE120AT1B2PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeatures Trench+ Field Stop Technology1200V Trench Field-Stop IGBT Low VCE(sat) with Low Switching LossesApplications Frequency CovertersMotor DrivesAuxiliary InvertersEquivalent Circuit SchematicIGBT - InverterMaximum Rated ValuesSymbol Description Conditions Values Unit
Datasheet: XD025H120CX1S3 , XD040H120AT1S3 , XD040Q120AT1S3 , XD050H065CX1S3 , XD050H120CX1S4 , XD075H065CX1S3 , XP015PJE120AT1B1 , XP015PJS120CL1B1 , BT15T120ANF , XP035PJE120AT1B2 , XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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