XP15PJS120CL1B1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: XP15PJS120CL1B1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 130 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 54 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
XP15PJS120CL1B1 Datasheet (PDF)
xp15pjs120cl1b1.pdf

XP15PJS120CL1B1PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeaturesLow Switching Losses 1200V Trench Field-Stop IGBT Low VCE(sat) with Positive Temperature Coefficient Applications Auxiliary Inverters Air Conditioning Motor Drives Uninterruptive Power Supply (UPS)IGBT - InverterMaximum Rated ValuesSymbol Description Conditions
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: STGW10M65DF2 | MMG100S120UA6TC | IKQ100N60TA | FD1000R33HE3-K | 6MBP50VAA060-50 | NGTB40N120L
History: STGW10M65DF2 | MMG100S120UA6TC | IKQ100N60TA | FD1000R33HE3-K | 6MBP50VAA060-50 | NGTB40N120L



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m | 2sk1058