XP15PJS120CL1B1 Datasheet and Replacement
Type Designator: XP15PJS120CL1B1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
trⓘ - Rise Time, typ: 54 nS
Package: MODULE
- IGBT Cross-Reference
XP15PJS120CL1B1 Datasheet (PDF)
xp15pjs120cl1b1.pdf
XP15PJS120CL1B1PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTCFeaturesLow Switching Losses 1200V Trench Field-Stop IGBT Low VCE(sat) with Positive Temperature Coefficient Applications Auxiliary Inverters Air Conditioning Motor Drives Uninterruptive Power Supply (UPS)IGBT - InverterMaximum Rated ValuesSymbol Description Conditions
Datasheet: XP015PJE120AT1B1 , XP015PJS120CL1B1 , XP025PJE120AT1B2 , XP035PJE120AT1B2 , XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , YGW60N65F1A2 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD .
History: MG25Q1BS11 | 2MBI300VN-170-50 | RJP60V0DPM | MG300N1US1 | GT10G101 | IXGH16N60C2D1 | SIW50N65G2H2G
Keywords - XP15PJS120CL1B1 transistor datasheet
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History: MG25Q1BS11 | 2MBI300VN-170-50 | RJP60V0DPM | MG300N1US1 | GT10G101 | IXGH16N60C2D1 | SIW50N65G2H2G
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