XP15PJS120CL1B1 Specs and Replacement
Type Designator: XP15PJS120CL1B1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: MODULE XP15PJS120CL1B1 Substitution - IGBT ⓘ Cross-Reference Search
XP15PJS120CL1B1 datasheet
xp15pjs120cl1b1.pdf
XP15PJS120CL1B1 PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Features Low Switching Losses 1200V Trench Field-Stop IGBT Low VCE(sat) with Positive Temperature Coefficient Applications Auxiliary Inverters Air Conditioning Motor Drives Uninterruptive Power Supply (UPS) IGBT - Inverter Maximum Rated Values Symbol Description Conditions ... See More ⇒
Specs: XP015PJE120AT1B1 , XP015PJS120CL1B1 , XP025PJE120AT1B2 , XP035PJE120AT1B2 , XP040PJE120AL1B2 , XP050PCE120AT1E2 , XP075HFN120CT1R3 , XP075PCE120AL1E3 , FGW75N60HD , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , SGM200HF12A3TFD , SGM25PA12A8TFD , SGM35PA12A6BTFD .
History: TGAN80N60F2DS | RJH60D7BDPQ-E0 | TGAN40N65F2DS | NGTB30N60FLWG | T1200TB25A | STGB18N40LZ
Keywords - XP15PJS120CL1B1 transistor spec
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History: TGAN80N60F2DS | RJH60D7BDPQ-E0 | TGAN40N65F2DS | NGTB30N60FLWG | T1200TB25A | STGB18N40LZ
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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