SGM200HF12A3TFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGM200HF12A3TFD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 200(80C)
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 8
Temperatura máxima de unión (Tj), ℃: 125
Tiempo de subida (tr), typ, nS: 285
Capacitancia de salida (Cc), typ, pF: 3600
Carga total de la puerta (Qg), typ, nC: 1494
Paquete / Cubierta: MODULE
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SGM200HF12A3TFD Datasheet (PDF)
sgm200hf12a3tfd.pdf
SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3
nsgm200gb120b.pdf
SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
sgm2014am.pdf
SGM2014AMPreliminaryGaAs N-channel Dual Gate MES FETDescriptionThe SGM2014AM is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at
sgm2014.pdf
SGM2014ANPreliminaryGaAs N-channel Dual Gate MES FETDescriptionM-281The SGM2014AN is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz
Otros transistores... XP075HFN120CT1R3 , XP075PCE120AL1E3 , XP15PJS120CL1B1 , XP25PJT120C0B2 , SGM100HF12A1TFD , SGM100HF12A1TFDT4 , SGM100HF12A3TFD , SGM150HF12A3TFD , FGPF4533 , SGM25PA12A8TFD , SGM35PA12A6BTFD , SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ