All IGBT. SGM200HF12A3TFD Datasheet

 

SGM200HF12A3TFD IGBT. Datasheet pdf. Equivalent


   Type Designator: SGM200HF12A3TFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 200(80C)
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 8
   Maximum Junction Temperature (Tj), ℃: 125
   Rise Time (tr), typ, nS: 285
   Collector Capacity (Cc), typ, pF: 3600
   Total Gate Charge (Qg), typ, nC: 1494
   Package: MODULE

 SGM200HF12A3TFD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGM200HF12A3TFD Datasheet (PDF)

 0.1. Size:408K  silan
sgm200hf12a3tfd.pdf

SGM200HF12A3TFD
SGM200HF12A3TFD

SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3

 8.1. Size:1383K  nell
nsgm200gb120b.pdf

SGM200HF12A3TFD
SGM200HF12A3TFD

SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

 9.1. Size:71K  sony
sgm2014am.pdf

SGM200HF12A3TFD
SGM200HF12A3TFD

SGM2014AMPreliminaryGaAs N-channel Dual Gate MES FETDescriptionThe SGM2014AM is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at

 9.2. Size:51K  sony
sgm2014.pdf

SGM200HF12A3TFD
SGM200HF12A3TFD

SGM2014ANPreliminaryGaAs N-channel Dual Gate MES FETDescriptionM-281The SGM2014AN is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz

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