SGM200HF12A3TFD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGM200HF12A3TFD Specs and Replacement

Type Designator: SGM200HF12A3TFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200(80C) A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 285 nS

Coesⓘ - Output Capacitance, typ: 3600 pF

Package: MODULE

SGM200HF12A3TFD Substitution

- IGBT ⓘ Cross-Reference Search

SGM200HF12A3TFD datasheet

0.1. Size:408K silan
sgm200hf12a3tfd.pdf pdf_icon

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SEMICONDUCTOR 5. Small temperature dependence of the turn-off switching loss 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR ... See More ⇒

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SGM2014AM Preliminary GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features Low voltage operation Low noise NF = 1.5dB (typ.) at 900MHz High gain Ga = 18dB (typ.) at... See More ⇒

9.2. Size:51K sony
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