SGM200HF12A3TFD - параметры транзистора, его аналоги, Даташиты

SGM200HF12A3TFD Datasheet (PDF)

0.1. Size:408K silan
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SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3

8.1. Size:1383K nell
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SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

9.1. Size:71K sony
sgm2014am.pdf pdf_icon

SGM2014AMPreliminaryGaAs N-channel Dual Gate MES FETDescriptionThe SGM2014AM is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz High gain: Ga = 18dB (typ.) at

9.2. Size:51K sony
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SGM2014ANPreliminaryGaAs N-channel Dual Gate MES FETDescriptionM-281The SGM2014AN is an N-channel dual gate GaAsMES FET for UHF band low-noise amplification.This FET is suitable for a wide range of applicationsincluding TV tuners, cellular radios, and DBS IFamplifiers.Features Ultra small package Low voltage operation Low noise: NF = 1.5dB (typ.) at 900MHz

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