IXGH40N30BS Todos los transistores

 

IXGH40N30BS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH40N30BS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 300 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 210 pF
   Paquete / Cubierta: TO247SMD
 

 Búsqueda de reemplazo de IXGH40N30BS IGBT

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Principales características: IXGH40N30BS

 ..1. Size:92K  ixys
ixgh40n30 ixgh40n30a ixgh40n30b ixgh40n30s ixgh40n30as ixgh40n30bs.pdf pdf_icon

IXGH40N30BS

VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V TO-247 AD IC25 TC = 25 C 60 A IC90 TC = 90 C

 4.1. Size:80K  ixys
ixgh40n30bd1.pdf pdf_icon

IXGH40N30BS

IXGH40N30BD1 VCES = 300 V HiPerFASTTM IGBT IC25 = 60 A VCE(sat) = 2.4 V tfi = 75 ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G C (TAB) VGEM Transient 30 V C E IC25 TC = 25 C60 A G = Gate, C = Collector, IC90 TC = 90 C40 A E = Emitter, TAB = Collector ICM TC = 25 C, 1 ms 160

 5.1. Size:92K  ixys
ixgh40n30.pdf pdf_icon

IXGH40N30BS

VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V TO-247 AD IC25 TC = 25 C 60 A IC90 TC = 90 C

 7.1. Size:145K  ixys
ixgh40n60c2.pdf pdf_icon

IXGH40N30BS

VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1

Otros transistores... IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 , IXGH32N60AU1S , IXGH40N30AS , TGAN40N60FD , IXGH50N60AS , IXGT32N60B , IXSM25N100 , IXSM25N100A , IXGH10N100U1 , IXGH10N100 , IXGH10N100A , IXGH10N100AU1 .

 

 
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