IXGH40N30BS Specs and Replacement
Type Designator: IXGH40N30BS
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.4(max) V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TO247SMD
- IGBT ⓘ Cross-Reference Search
IXGH40N30BS datasheet
..1. Size:92K ixys
ixgh40n30 ixgh40n30a ixgh40n30b ixgh40n30s ixgh40n30as ixgh40n30bs.pdf 
VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V TO-247 AD IC25 TC = 25 C 60 A IC90 TC = 90 C... See More ⇒
4.1. Size:80K ixys
ixgh40n30bd1.pdf
IXGH40N30BD1 VCES = 300 V HiPerFASTTM IGBT IC25 = 60 A VCE(sat) = 2.4 V tfi = 75 ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V VGES Continuous 20 V G C (TAB) VGEM Transient 30 V C E IC25 TC = 25 C60 A G = Gate, C = Collector, IC90 TC = 90 C40 A E = Emitter, TAB = Collector ICM TC = 25 C, 1 ms 160 ... See More ⇒
5.1. Size:92K ixys
ixgh40n30.pdf
VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT IXGH 40N30/S 300 V 60 A 1.8 V 220ns IXGH 40N30A/S 300 V 60 A 2.1 V 120ns IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns Symbol Test Conditions Maximum Ratings TO-247 SMD* VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C; RGE = 1 M 300 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V TO-247 AD IC25 TC = 25 C 60 A IC90 TC = 90 C... See More ⇒
7.1. Size:145K ixys
ixgh40n60c2.pdf
VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1... See More ⇒
7.2. Size:52K ixys
ixgh40n60.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C40 A TO-204 AE (IXGM) I... See More ⇒
7.3. Size:213K ixys
ixgh40n120b2d1.pdf
High Voltage IGBTs VCES = 1200V IXGH40N120B2D1 w/Diode IXGT40N120B2D1 IC110 = 40A VCE(sat) 3.5V tfi(typ) = 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G C (TAB) C VGEM Transient 30 V E IC25 TC = 25 C (Limited by Lead) 75 A IC110 TC = ... See More ⇒
7.4. Size:52K ixys
ixgh40n60a.pdf
VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 V High speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C40 A TO-204 AE (IXGM) I... See More ⇒
7.5. Size:162K ixys
ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf
HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C (TAB) C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V... See More ⇒
7.6. Size:291K ixys
ixgh40n60b ixgt40n60b.pdf
IXGH 40N60B VCES = 600 V HiPerFASTTM IGBT IXGT 40N60B IC25 = 75 A VCE(sat) = 2.1 V tfi = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC110 TC = 110 C40 A TO-268 (D3) ICM TC = 25 C... See More ⇒
7.7. Size:122K ixys
ixgh40n60c.pdf
VCES = 600 V IXGH 40N60C HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C LightspeedTM Series VCE(sat) = 2.5 V tfi typ = 75 ns Preliminary Data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC110 TC = 11... See More ⇒
7.8. Size:168K ixys
ixgh40n60c2d1.pdf
HiPerFASTTM IGBTs VCES = 600V IXGT40N60C2D1 IC110 = 40A w/ Diode IXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1 tfi(typ) = 32ns C2-Class High Speed IGBTs TO-268 (IXGT) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-268 (IXGJ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V ... See More ⇒
7.9. Size:169K ixys
ixgh40n120c3.pdf
Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH40N120C3 IC110 = 40A VCE(sat) 4.4V High speed PT IGBTs tfi(typ) = 57ns for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-247 (IXGH) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 ... See More ⇒
7.10. Size:168K ixys
ixgh40n120a2.pdf
IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 VCES = 1200 V High Voltage IGBT IXGT 40N120A2 IC25 = 75 A Low VCE(sat) VCE(sat) 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VCES TJ = 25 C to 150 C 1200 V VCES TJ = 25 C to 150 C 1200 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C, IGBT chip capabilit... See More ⇒
7.12. Size:149K ixys
ixgh40n60c2 ixgt40n60c2.pdf
VCES = 600 V IXGH 40N60C2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60C2 C2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 (IXGH) IC25 TC = 25 C (limited by leads) 75 A IC110 TC = 1... See More ⇒
7.14. Size:575K ixys
ixgh40n60b2.pdf
Advance Technical Data VCES = 600 V IXGH 40N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 40N60B2 VCE(sat) ... See More ⇒
7.15. Size:291K ixys
ixgh40n60b.pdf
IXGH 40N60B VCES = 600 V HiPerFASTTM IGBT IXGT 40N60B IC25 = 75 A VCE(sat) = 2.1 V tfi = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A IC110 TC = 110 C40 A TO-268 (D3) ICM TC = 25 C... See More ⇒
7.16. Size:196K ixys
ixgh40n120c3d1.pdf
Preliminary Technical Information VCES = 1200V GenX3TM C3-Class IXGH40N120C3D1 IC110 = 40A IGBT w/Diode VCE(sat) 4.4V tfi(typ) = 57ns High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G TAB ... See More ⇒
Specs: IXGA15N120C
, IXGA20N100
, IXGA20N60B
, IXGA7N60B
, IXGA7N60C
, IXGA8N100
, IXGH32N60AU1S
, IXGH40N30AS
, TGAN40N60FD
, IXGH50N60AS
, IXGT32N60B
, IXSM25N100
, IXSM25N100A
, IXGH10N100U1
, IXGH10N100
, IXGH10N100A
, IXGH10N100AU1
.
Keywords - IXGH40N30BS transistor spec
IXGH40N30BS cross reference
IXGH40N30BS equivalent finder
IXGH40N30BS lookup
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