SGT20T60SDM1P7 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT20T60SDM1P7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 46 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 55 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SGT20T60SDM1P7 Datasheet (PDF)
sgt20t60sdm1p7.pdf
SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A
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SGT20T60SD1F(S)(P7)(FD)(PN) 20A600V C 21SGT20T60SD1F(S)(P7)(FD)(PN)(T)GField Stop III1 UPSSMPS PFC 323TO-3PE 13
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SGT20T135QR1P7(PN)(PT) 20A1350V C 2SGT20T135QR1P7/PN/PT 1Reverse ConductingG
Otros transistores... SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , SGT15T60QD1F , FGPF4536 , SGT25T120FD1P7 , SGT25U120FD1P7 , SGT40N60FD2PN , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS .
History: FGH40N60SMD | IKB20N60H3 | GT45G128 | SKB06N60 | KGT30N60KDA | APT13GP120BDF1 | IKU06N60R
History: FGH40N60SMD | IKB20N60H3 | GT45G128 | SKB06N60 | KGT30N60KDA | APT13GP120BDF1 | IKU06N60R
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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