SGT20T60SDM1P7 Datasheet and Replacement
Type Designator: SGT20T60SDM1P7
Type: IGBT + Anti-Parallel Diode
Marking Code: 20T60SDM1
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 46 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qg ⓘ - Total Gate Charge, typ: 52 nC
Package: TO247
SGT20T60SDM1P7 substitution
SGT20T60SDM1P7 Datasheet (PDF)
sgt20t60sdm1p7.pdf
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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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