SGT20T60SDM1P7 Datasheet. Specs and Replacement

Type Designator: SGT20T60SDM1P7  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 46 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 55 pF

Package: TO247

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SGT20T60SDM1P7 datasheet

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SGT20T60SDM1P7

SGT20T60SDM1P7 20 600V C 2 SGT20T60SDM1P7 Field Stop 1 G UPS SMPS PFC 3 E 20A 600V VCE(sat)( )=1.7V@IC=20A ... See More ⇒

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SGT20T60SDM1P7

SGT20T60SD1F(S)(P7)(FD)(PN) 20A 600V C 2 1 SGT20T60SD1F(S)(P7)(FD)(PN)(T) G Field Stop III 1 UPS SMPS PFC 3 2 3 TO-3P E 1 3 ... See More ⇒

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SGT20T60SDM1P7

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Specs: SGM50HF12A1TFD, SGM50HF12A1TFDT4, SGM50PA12A6BTFD, SGM75HF12A1TFD, SGM75HF12A1TFD1, SGM75HF12A1TFDT4, SGM75HF12A1TLD, SGT15T60QD1F, IXGH60N60, SGT25T120FD1P7, SGT25U120FD1P7, SGT40N60FD2PN, SGT40N60FD2P7, SGT40N60NPFDPN, SGT50T65FD1PN, SGT50T65FD1P7, SGT50T65FD1PS

Keywords - SGT20T60SDM1P7 transistor spec

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