YGW15N120F1A Todos los transistores

 

YGW15N120F1A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: YGW15N120F1A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 52 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

YGW15N120F1A Datasheet (PDF)

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 ygw15n120f1a.pdf pdf_icon

YGW15N120F1A

YGW15N120F1A 1200V /15A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High r

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 ygw15n120t3.pdf pdf_icon

YGW15N120F1A

YGW15N120T3 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switching

Otros transistores... YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW60N65F1A1 , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 .

History: IXGM17N100 | OST30N65HMF | IXGH32N60BU1 | OST20N135HRF | IRGP4069 | IRGS4056D

 

 
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