All IGBT. YGW15N120F1A Datasheet

 

YGW15N120F1A IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW15N120F1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 17
   Collector Capacity (Cc), typ, pF: 52
   Total Gate Charge (Qg), typ, nC: 84
   Package: TO247

 YGW15N120F1A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW15N120F1A Datasheet (PDF)

 ..1. Size:481K  cn luxin semi
 ygw15n120f1a.pdf

YGW15N120F1A YGW15N120F1A

YGW15N120F1A 1200V /15A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High r

 5.1. Size:408K  cn luxin semi
 ygw15n120t3.pdf

YGW15N120F1A YGW15N120F1A

YGW15N120T3 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution Short circuit withstand time 10s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switching

Datasheet: YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , IRGP4063D , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 .

 

 
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