YGW15N120F1A PDF and Equivalents Search

 

YGW15N120F1A Specs and Replacement

Type Designator: YGW15N120F1A

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 52 pF

Package: TO247

 YGW15N120F1A Substitution

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YGW15N120F1A datasheet

 ..1. Size:481K  cn luxin semi
 ygw15n120f1a.pdf pdf_icon

YGW15N120F1A

YGW15N120F1A 1200V /15A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1200 V CE switching losses, high energy efficiency and I 15 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) C microwave oven, etc. FEATURES Trench-Stop Technology offering High speed switching High r... See More ⇒

 5.1. Size:408K  cn luxin semi
 ygw15n120t3.pdf pdf_icon

YGW15N120F1A

YGW15N120T3 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A C improved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution Short circuit withstand time 10 s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switching... See More ⇒

Specs: YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , GT30G124 , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 .

History: VS-GP100TS60SFPBF

Keywords - YGW15N120F1A transistor spec

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