YGW25N120F1A1 Todos los transistores

 

YGW25N120F1A1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: YGW25N120F1A1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 32 nS

Coesⓘ - Capacitancia de salida, typ: 70 pF

Encapsulados: TO247

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YGW25N120F1A1 datasheet

 ..1. Size:481K  cn luxin semi
 ygw25n120f1a1.pdf pdf_icon

YGW25N120F1A1

YGW25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat

 5.1. Size:428K  cn luxin semi
 ygw25n120u2.pdf pdf_icon

YGW25N120F1A1

YGW25N120U2 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.85 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability du

 5.2. Size:563K  cn luxin semi
 ygw25n120t1.pdf pdf_icon

YGW25N120F1A1

YGW25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parall

 7.1. Size:602K  cn luxin semi
 ygw25n135f1a.pdf pdf_icon

YGW25N120F1A1

YGW25N135F1A 1350V /25A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-S

MOSTRAR MÁS

Otros transistores... YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , RJH3047 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , YGW40N65F1A2 .

History: T1600GB45G | STGW40V60DLF | STGWA30N120KD | STGWA75M65DF2 | STGB10M65DF2 | SPT40N120T1BT8TL

 

 

 

 

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