All IGBT. YGW25N120F1A1 Datasheet

 

YGW25N120F1A1 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW25N120F1A1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 135 nC
   Package: TO247

 YGW25N120F1A1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW25N120F1A1 Datasheet (PDF)

 ..1. Size:481K  cn luxin semi
 ygw25n120f1a1.pdf

YGW25N120F1A1 YGW25N120F1A1

YGW25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CEimproved reliability I 25 A C Trench-Stop Technology offering : High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat

 5.1. Size:428K  cn luxin semi
 ygw25n120u2.pdf

YGW25N120F1A1 YGW25N120F1A1

YGW25N120U2 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A Cimproved reliability V I =25A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low V CEsat Easy parallel switching capability du

 5.2. Size:563K  cn luxin semi
 ygw25n120t1.pdf

YGW25N120F1A1 YGW25N120F1A1

YGW25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A Cimproved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10s Low V CE(SAT) Easy parall

 7.1. Size:602K  cn luxin semi
 ygw25n135f1a.pdf

YGW25N120F1A1 YGW25N120F1A1

YGW25N135F1A 1350V /25A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1350 V CEswitching losses, high energy efficiency and I 25 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) Cmicrowave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-S

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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